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FQI10N60CTU
| Part Number | FQI10N60CTU |
|---|---|
| Description | MOSFET N-CH 600V 9.5A I2PAK |
| Category | Discrete Semiconductor Products |
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| In Stock | 16565 |
| Datasheet | Download |
Description
| Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|
| Lead / RoHS Status | Lead free / RoHS Compliant |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | I2PAK (TO-262) |
| Series | QFET® |
| Rds On (Max) @ Id, Vgs | 730 mOhm @ 4.75A, 10V |
| Power Dissipation (Max) | 3.13W (Ta), 156W (Tc) |
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Moisture Sensitivity Level | 1 (Unlimited) |
| Input Capacitance @ Vds | 2040pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
| FET Type | N-Channel |
| Drive Voltage (Max/Min Rds) | 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Detailed Description | N-Channel 600V 9.5A (Tc) 3.13W (Ta), 156W (Tc) Through Hole I2PAK (TO-262) |
| Current – Drain (Id) @ 25°C | 9.5A (Tc) |
